Single IGBT dual switch (~ ⅓ of our ED-Type)

Record current density 1.2kV, 2x250A on 45x45x4mm3

–Very low inductance <10nH à significant lower over-voltage

–Lowest contact resistance <0.9mΩ， Optimal use of low VCEsat IGBT

–Low Rth and excellent cycling capability thanks to rugged SiN Substrate

–Integrated Thermistor